Effect of Sol-Gel Prepared ZnO Electron Selective Layer on the Performance of Inverted Organic Solar Cells

摘要

ZnO buffer layer was prepared as electron selective layers (ESL) for photo-induced electron transport and hole blocking in inverted organic solar cells (IOSCs) by sol-gel process. The effects of thickness and surface roughness of ZnO ESL on the performance of IOSCs were investigated. Power Conversion Efficiency (PCE) of the IOSC strongly varied as a function of ZnO film thickness and surface roughness, in particular, when the film thickness was <70Â nm, increase in the surface roughness enhanced photovoltaic performances. It is demonstrated that optimization of the electrode thickness and roughness is essential for obtaining better performance of organic photovoltaic cells.