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Create Transmission-Line Matching Circuits For Power Amplifiers

机译:创建功率放大器的传输线匹配电路

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摘要

MATCHING circuits allow power amplifiers (PAs) to attain high gain, high linearity, high efficiency, and high stability over a narrow or wide frequency band. The techniques for designing PA-matching circuits are especially important for circuits that use transmission lines, where determining circuit parameters is more complicated than for lumped-element matching circuits. An effective approach is to use a theoretical analysis to define the appropriate matching circuit, then calculate the matching-circuit parameters to minimize final tuning and attain a stable operation mode. This article presents a transmission-line matching-circuit design based on analytical equations to calculate the circuits elements for L, π, and T transformers. The introduction of a principle of equal quality factors for multisection L transformers simplifies the calculation procedure and requires only one Q circle on the Smith chart. The article demonstrates these matching principles—analytically and by Smith chart—using two examples: a narrowband, microwave, bipolar PA, and a broadband, ultra-high-frequency (UHF), laterally-diffused-metal-oxide-semiconductor-field-effect-transistor (LDMOSFET), high-power amplifier.
机译:匹配电路允许功率放大器(PA)在狭窄或宽频带上获得高增益,高线性度,高效率和高稳定性。设计PA匹配电路的技术对于使用传输线的电路尤其重要,在传输线中,确定电路参数要比集总元件匹配电路复杂。一种有效的方法是使用理论分析来定义适当的匹配电路,然后计算匹配电路参数以最大程度地减少最终调整并获得稳定的工作模式。本文提出了一种基于解析方程的传输线匹配电路设计,以计算L,π和T变压器的电路元件。为多段L型变压器引入等品质因数的原理,简化了计算过程,并且在史密斯圆图上只需要一个Q圆。本文使用两个示例通过解析和史密斯圆图演示了这些匹配原理:窄带,微波,双极功率放大器以及宽带,超高频(UHF),横向扩散金属氧化物半导体场-效果晶体管(LDMOSFET),大功率放大器。

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