WIN SEMICONDUCTORS SIGNALS Staying Power of Gallium Arsenide

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WIN SEMICONDUCTORS SIGNALS Staying Power of Gallium Arsenide

机译：WIN SEMICONDUCTORS SIGNALS砷化镓的持久力

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the staying power of gallium arsenide is paying off for Win Semiconductors, one of the largest contract manufacturers for the chips, which are used widely in smartphones and wireless infrastructure.

机译：砷化镓的持久力正在为Win Semiconductors带来回报，后者是芯片的最大合同制造商之一，该芯片广泛用于智能手机和无线基础设施中。

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《Microwaves & RF》 |2017年第8期|24-24|共1页
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收录信息美国《科学引文索引》(SCI);
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正文语种 eng
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1. Transient electron transport in the Ⅲ-Ⅴ compound semiconductors gallium arsenide and gallium nitride [J] . Walid A. Hadi, Reddiprasad Cheekoori, Michael S. Shur, Journal of materials science . 2013,第2期

机译：Ⅲ-Ⅴ族化合物半导体中的瞬态电子传输砷化镓和氮化镓
2. High power, longevity gallium arsenide photoconductive semiconductor switches [J] . YANG HongChun, CUI HaiJuan, SUN YunQing, 中国科学通报：英文版 . 2010,第013期

机译：高功率，长寿命的砷化镓光电导半导体开关
3. Bioleaching of gallium from gallium arsenide by Cellulosimicrobiurn funkei and its application to semiconductor/electronic wastes [J] . Maneesuwannarat Sirikan, Vangnai Alisa S., Yamashita Mitsuo, Transactions of The Institution of Chemical Engineers. Process Safety and Environmental Protection, Part B . 2016,第Jana期

机译：纤维素微霉菌从砷化镓中生物浸出镓及其在半导体/电子废物中的应用
4. Progress toward a compact, high power ultra-wideband array using gallium arsenide photoconductive semiconductor switches [C] . Lehr, J.M., Abdalla, . 1998

机译：使用砷化镓光电导半导体开关向紧凑，高功率超宽带阵列发展
5. PIEZO- AND PHOTO-MODULATION STUDIES OF SEMICONDUCTORS: I. DILUTED MAGNETIC SEMICONDUCTORS. II. GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE, ZINC-SELENIDE, AND CADMIUM - MANGANESE - TELLURIDE HETEROSTRUCTURES. [D] . LEE, YUNG-RAI. 1987

机译：半导体的压电调制和光调制研究：I.稀释的磁性半导体。二。砷化镓/铝镓-砷化物，锌-硒化物和镉-锰-碲化物异质结构。
6. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide [O] . Slavomír Nemšák, Mathias Gehlmann, Cheng-Tai Kuo, -1

机译：稀磁性半导体锰掺杂砷化镓的元素和动量分辨电子结构
7. Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography [O] . Anthony Moulins, Roberto Dugnani, Ricardo J. Zednik 2021

机译：骨折表面分析和使用Fractography砷化镓III-V半导体的定量表征

WIN SEMICONDUCTORS SIGNALS Staying Power of Gallium Arsenide

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