机译:高功率全双工K / KA频段相控阵列前端
Ulm Univ Inst Elect Devices & Circuits Albert Einstein Allee 45 D-89081 Ulm Germany|Apple Technol Serv BV & Co KG Hackerbrucke 6 D-80335 Munich Germany;
Univ Calabria Dipartimento Ingn Informat Modellist Elettron & S Via P Bucci 42C I-87036 Arcavacata Di Rende Italy;
Univ Calabria Dipartimento Ingn Informat Modellist Elettron & S Via P Bucci 42C I-87036 Arcavacata Di Rende Italy|Ampleon Netherlands BV Halfgeleiderweg 8 NL-6534 AV Nijmegen Netherlands;
Univ Calabria Dipartimento Ingn Informat Modellist Elettron & S Via P Bucci 42C I-87036 Arcavacata Di Rende Italy;
Ulm Univ Inst Elect Devices & Circuits Albert Einstein Allee 45 D-89081 Ulm Germany;
antenna phased arrays; BiCMOS integrated circuits; Ge-Si alloys; multiplexing equipment; mean square error methods; satellite antennas; telecommunication power management; low-power electronics; energy conservation; power consumption; microwave antenna arrays; millimetre wave antenna arrays; MMIC power amplifiers; phase control; full-duplex front-end; BiCMOS process; integrated circuit; transmit channels; RF channel; bias currents; active channels; power amplifier operation mode; serial bus; phase control; transmit mode; Doherty power amplifier; dynamic adaptive bias circuit; power efficiency; K-Ka-band phased array front-end; DC array power consumption; amplitude-phase root-mean-square errors; amplitude control; satellite communication; power 81; 0 mW; power 15; 5 mW; frequency 29; 5 GHz to 30; 8 GHz; frequency 19; 7 GHz to 21; 0 GHz; size 0; 25 mum; noise figure 3; 2 dB; gain 37; 3 dB; gain 33; 7 dB; SiGe:C;
机译:使用两个交叉偏振阵列和消除器的28-GHz全双工阵列阵列前端
机译:Ka波段单芯片SiGe BiCMOS相控阵发送/接收前端
机译:Ka-Band的基于硅的真实时间延迟相控阵前端
机译:适用于Ka频段FMCW相控阵雷达收发器的35 GHz TX和RX CMOS前端
机译:用于毫米波相控阵收发器前端的区域和功率降低技术
机译:适用于AlN PMUT阵列的微型0.13μmCMOS前端模拟
机译:用于SATCOM相控阵天线的新型Ka波段GaN相移器