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0.5-6 ghz low-voltage low-power mixer using a modified cascode topology in 0.18 ;C;m cmos technology

机译:0.5-6 GHz低压低功率混频器,采用0.18; C; m cmos技术的改进的共源共栅拓扑

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摘要

A broadband low-voltage low-power down-conversion mixer using a 0.18 ;C;m standard CMOS process is presented. The proposed mixer uses a modified cascode topology with a bulk-injection technique to achieve lowvoltage and low-power performance. The mixer features a maximum conversion gain of 6 dB at a radio frequency (RF) of 2.4 GHz, a single-sideband (SSB) noise figure of 15.2 dB, and an input third-order intercept point (IIP3) of 0 dBm. Moreover, the chip area of the mixer core is only 0.15 ?? 0.23 mm2. The measured 3 dB RF bandwidth is from 0.5 to 6 GHz with an intermediate frequency (IF) of 100 MHz. The optimum DC supply voltage (VDD) can be scaled down to 0.7 V with a drain current within 0.4 mA. The supply voltage and DC power of this circuit can be compatible with an advanced 90 or 65 nm CMOS technology.
机译:提出了一种采用0.18; C; m标准CMOS工艺的宽带低压低功耗下变频混频器。拟议的混频器使用经过修改的共源共栅拓扑结构和整体注入技术来实现低电压和低功耗性能。该混频器在2.4 GHz射频(RF)时具有6 dB的最大转换增益,15.2 dB的单边带(SSB)噪声系数,以及0 dBm的输入三阶交调点(IIP3)。而且,混频器内核的芯片面积仅为0.15Ω。 0.23平方毫米测得的3 dB RF带宽为0.5至6 GHz,中频(IF)为100 MHz。最佳直流电源电压(VDD)可以缩小至0.7 V,漏极电流在0.4 mA以内。该电路的电源电压和直流电源可以与先进的90或65 nm CMOS技术兼容。

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