EFFECTIVE CIRCUIT DESIGN TECHNIQUES TO INCREASE MOSFET POWER AMPLIFIER EFFICIENCY

摘要

Newly developed low cost and highly linear, high gain and high power laterally diffused metal oxide semi-conductor (LDMOS) and vertically diffused metal oxide semiconductor (VDMOS) field-effect transistors are attractive devices for many applications including commercial FM broadcasting and TV power transmitters, cellular and paging communication systems, and military RF and microwave hand-held transceivers. In all cases, along with high quality transmission of radio signals resulting from the high linearity of the amplifier transfer characteristic, it is necessary to provide high reliability and low overall dimensions of the power amplifiers along with an increase in total operating efficiency.