Development Report of Power FETs for Solid- state Power Amplifiers from GaAs to GaN

摘要

GaN HEMTs are the front-runners for the next-generation of high power devices, and developers foresee applications for these devices expanding from their initial use with pulse-mode operation for radar. Toshiba estimates that GaN devices with power output two to three times that of GaAs devices, above C-band, can be achieved by developing GaN technology to its full potential. The realization of such devices will accelerate the trend of replacing electronic tubes with SSPA in the amplifier market for terrestrial communications base stations, satellite communications earth station and radar use at C- to K-band (4 to 26 GHz) frequencies.