0.1 μm PHEMT Process for E-band Power Applications

摘要

To meet the ever-increasing demands of next generation wireless infrastructure, fiber optics and advanced military systems markets, WIN Semiconductors Corp. has developed an ultra-high performance 0.1 urn GaAs PHEMT technology. This device platform, named PP10, is produced on 150 mm GaAs wafers in WIN Semiconductor's state-of-the-art wafer foundry located in Taiwan and is available with an option of 50 or 100 urn substrate thickness. With Ft greater than 135 GHz and F_(max) over 185 GHz, PP10 is targeted towards millimeter-wave power products at E- and V-band, and will enable the realization of high data rate 70 to 90 GHz point-to-point radios used in the backhaul of 3G/4G mobile base stations. Additionally, the superior performance of PP10, as well as the volume availability of products built on this technology will make possible a wide range of high frequency products in entirely new applications.