Third-Gen SiGe Reduces Noise and Power Consumption

摘要

Towerjazz recently announced the company's third-generation 0.18 n.m SiGe technology, SBC18H3, offering transistors with 240 GHz Ft and 260 GHz Fmax in a cost-effective and analog-friendly 0.18 |lm node. The technology is built on the same mature integration platform used for the company's prior two SiGe processes, which are currently in high volume production (SBC18H2 at 200 GHz and SBC18HX at 155 GHz). The technology addresses next-generation needs for high speed interfaces in communication protocols, such as optical fiber, and high data rate wireless, by improving performance with reduced noise and power consumption of key building blocks.