Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications

摘要

Design and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power Amplifier are presented. The amplifier, suitable for point-to-point microwave backhaul applications, exploits a TriQuint GaN foundry process. Large signal measurements exhibit power gain higher than 10 dB and 7 dB in the lower and higher bands respectively, and saturated output power of 34.7 dBm, in a 15% band around the two center frequencies.