A Highly Linear Low Noise Amplifier With Wide Range Derivative Superposition Method

摘要

This letter presents an L-band highly linear differential low noise amplifier (LNA) in a standard 90-nm CMOS process. A wide range derivative superposition technique is proposed to maximize the third-order intercept point (IP3), and at the same time, minimize the third-order intermodulation distortion (IMD3) over a wide input power range. The LNA chip achieves a measured OIP3 of and IMD3 of with input power. The measured peak gain and minimum noise figure are 15.4 dB and 1.36 dB at 1.27 GHz, respectively. The LNA chip consumes 40 mA from a 3.3-V supply.