首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >A 71 dB 150 src='/images/tex/20294.gif' alt='mu {rm W}'> Variable-Gain Amplifier in 0.18 src='/images/tex/16813.gif' alt='mu{rm m}'> CMOS Technology
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A 71 dB 150 src='/images/tex/20294.gif' alt='mu {rm W}'> Variable-Gain Amplifier in 0.18 src='/images/tex/16813.gif' alt='mu{rm m}'> CMOS Technology

机译:71 dB 150 src =“ / images / tex / 20294.gif” alt =“ mu {rm W}”> 可变增益放大器,采用0.18 src =“ / images / tex / 16813.gif” alt =“ mu {rm m}”> CMOS技术

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摘要

This letter presents a simple approach for ultra-low-power and high-frequency variable gain amplifier (VGA) design, which requires no additional circuitry to generate the exponential-like function. Thus, the power consumption and chip area of the designed VGA can be drastically reduced without deterioration of other performance. The inverse exponential-like dB-linear characteristic is achieved by utilizing a pair of complementary transistors as the load. The p-MOS transistor is self-biased in the saturation region, while the n-MOS transistor is biased in the sub-threshold region. To prove the concept, a five-cell VGA is fabricated in a standard 0.18 CMOS technology. The measurements show that the power consumption of the VGA is less than 150 and achieves a total gain range of 71 dB, out of which 45 dB is dB-linear with less than 1 dB gain error, as well as bandwidth of more than 50 MHz. The output is better than 0 dBm and the minimum input-referred noise is 7.5 .
机译:这封信为超低功耗和高频可变增益放大器(VGA)设计提供了一种简单的方法,该方法不需要额外的电路即可产生类似指数的功能。因此,在不降低其他性能的情况下,可以大大减少设计的VGA的功耗和芯片面积。通过使用一对互补晶体管作为负载,可以实现类似指数级的dB-线性反特性。 p-MOS晶体管在饱和区域内自偏置,而n-MOS晶体管在亚阈值区域内偏置。为了证明这一概念,采用标准的0.18 CMOS技术制造了五单元VGA。测量表明,VGA的功耗小于150,并实现了71 dB的总增益范围,其中线性45 dB是线性dB,增益误差小于1 dB,带宽大于50 MHz 。输出优于0 dBm,最小输入参考噪声为7.5。

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