A Fully Integrated Dual-Mode CMOS Power Amplifier With an Autotransformer-Based Parallel Combining Transformer

摘要

This letter presents a fully integrated dual-mode power amplifier (PA) with an autotransformer-based parallel combining transformer (ABPCT), fabricated with a standard 40-nm CMOS process. In comparison with a parallel combining transformer, the proposed ABPCT can offer high-efficiency performance in both high-power (HP) and low-power (LP) modes, and does so with a compact die area. With an 802.11g signal (64-QAM 54 Mbps) of 20-MHz channel bandwidth, the fully integrated dual-mode PA achieves 19.7 and 15.7 dBm average output powers with PAEs of 17.1% and 13%, in HP and LP modes, respectively, while satisfying a -25 dB error vector magnitude and spectral mask requirements. Operating the PA in the LP mode can save more than 40% of the current consumption at a 10-dBm average output power when compared with that in the HP mode.