A 3.1–10.6 GHz Ultra-Wideband Low Noise Amplifier With 13-dB Gain, 3.4-dB Noise Figure, and Consumes Only 12.9 mW of DC Power

摘要

A 3.1–10.6 GHz ultra-wideband two-stage pseudomorphit high electron mobility transistor low noise amplifier is presented. The first stage of the amplifier employs a resistive shunt feedback topology and two T-network sections to provide wideband input matching to a 50-$Omega$ antenna. The current-sharing dc bias topology is used to ensure the low power consumption under fixed 3-V battery operation. The amplifier exhibits state of the art performance consuming only 12.9 mW of dc power with a power gain of 12.5 dB, $pm$ 0.5 dB gain flatness, and 3.4–4.0 dB noise figure. Input match is better than $-$ 12.0 dB, output match is better than $-$15 dB, and group delay is 184 pS $pm$ 28 pS.