首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >Vertical Inductive Bridge EBG (VIB-EBG) Structure With Size Reduction and Stopband Enhancement for Wideband SSN Suppression
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Vertical Inductive Bridge EBG (VIB-EBG) Structure With Size Reduction and Stopband Enhancement for Wideband SSN Suppression

机译:垂直感应桥EBG(VIB-EBG)结构,具有减小尺寸和增强阻带的特性,可抑制宽带SSN

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摘要

In this letter, we propose a vertical inductive bridge electromagnetic bandgap (VIB-EBG) structure for size reduction of a unit cell and the wideband suppression of simultaneous switching noise (SSN) in a multi-layer package. With the proposed vertical inductive bridge, the inductance of an EBG unit cell is effectivel increased within a compact unit cell size. Compared to the previous planar bridge EBG structure, the proposed VIB-EBG structure achieves an 86% enhancement of the fractional stopband bandwidth and a 58% reduction in unit cell size. The starting frequency of the first bandgap $({rm f}_{rm L})$ is significantly reduced from 4.0 to 1.7 GHz. Wideband SSN suppression with a size reduction was successfully verified by HFSS simulations and measurements.
机译:在这封信中,我们提出了一种垂直感应桥式电磁带隙(VIB-EBG)结构,用于减小单元尺寸和多层封装中同时开关噪声(SSN)的宽带抑制。利用所提出的垂直感应电桥,在紧凑的单元电池尺寸内有效地增加了EBG单元电池的电感。与以前的平面桥EBG结构相比,拟议的VIB-EBG结构实现了部分阻带带宽的86%增强和单位晶胞尺寸减小58%。第一个带隙$({rm f} _ {rm L})$的起始频率从4.0 GHz大大降低到1.7 GHz。通过HFSS仿真和测量已成功验证了具有减小尺寸的宽带SSN抑制功能。

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