A 60 to 77 GHz Switchable LNA in an RF-MEMS Embedded BiCMOS Technology

摘要

In this letter, a 60 to 77 GHz switchable low-noise amplifier is presented. The IC is realized in a radio frequency microelectromechanical systems embedded 0.25 $mu$m SiGe-C BiCMOS technology. Measured results show that the presented IC achieves good performance in both frequency bands in terms of gain, noise figure and power consumption. These results demonstrate the successful monolithic integration of RF-MEMS switches with active devices, and a first time implementation of a reconfigurable low noise amplifier at such high frequencies.