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Fabrication of compliant high aspect ratio silicon microelectrode arrays using micro-wire electrical discharge machining

机译:使用微线放电加工制造顺应性高纵横比硅微电极阵列

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摘要

This paper reports on the fabrication of high aspect ratio silicon microelectrode arrays by micro-wire electrical discharge machining (μ-WEDM). Arrays with 144 electrodes on a 400 μm pitch were machined on 6 and 10 mm thick p-type silicon wafers to a length of 5 and 9 mm, respectively. Machining parameters such as voltage and capacitance were varied for different wire types to maximize the machining rate and to obtain uniform electrodes. Finite element analysis was performed to investigate electrode shapes with reduced lateral rigidity. These compliant geometries were machined using μ-WEDM followed by a two step chemical etching process to remove the recast layer and to reduce the cross sections of the electrodes.
机译:本文报道了通过微丝放电加工(μ-WEDM)制造高纵横比的硅微电极阵列。在6和10 mm厚的p型硅晶片上分别加工长度为400μm的具有144个电极的阵列,其长度分别为5和9 mm。对于不同的线材类型,改变了诸如电压和电容之类的加工参数,以最大化加工速度并获得均匀的电极。进行了有限元分析,以研究横向刚度降低的电极形状。这些顺应的几何形状是使用μ-WEDM加工的,然后进行两步化学蚀刻工艺以去除重铸层并减小电极的横截面。

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  • 来源
    《Microsystem Technologies》 |2009年第5期|789-797|共9页
  • 作者单位

    Precision Design Laboratory Department of Mechanical Engineering University of Utah Salt Lake City UT 84112 USA;

    Precision Design Laboratory Department of Mechanical Engineering University of Utah Salt Lake City UT 84112 USA;

    Microsystems Laboratory Department of Electrical and Computer Engineering University of Utah Salt Lake City UT 84112 USA;

    Microsystems Laboratory Department of Electrical and Computer Engineering University of Utah Salt Lake City UT 84112 USA;

    Precision Design Laboratory Department of Mechanical Engineering University of Utah Salt Lake City UT 84112 USA;

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