Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer

摘要

Porous silicon photodetectors obtained by electrochemical etching of p-type non-polished crystalline silicon were studied. A metal-porous silicon structure was used to obtain the rectifying behavior. The geometry of the metal layer deposited by thermal evaporation on the porous zone was modified with different masks fabricated using a photolithographic method. The samples obtained under different anodization conditions were characterized by PL. The sample that showed the best intensity in photoluminescence, centered on 675 nm, was selected and five samples obtained under these conditions were prepared to compare the difference in the photoresponse because of the geometry of the evaporated metal layer. The responsivities obtained show us an important difference between the devices and allow us to propose a specific geometrical pattern to obtain a better response in this kind of devices.