Quasi-static capacitance-voltage characteristics of pentacene-based metal-oxide-semiconductor structures

摘要

Quasi-static capacitance-voltage (QSCV) measurements are performed on modified metal-oxide-semiconductor capacitors in order to investigate the capacitance characteristics of the active channel region of organic thin-film transistors (OTFTs). Devices are fabricated on highly doped Si wafer with SiO_2 as the gate dielectric and pentacene as the organic semiconductor. Hysteresis is observed in the QSCV characteristics, which is explained with the charge trapping in the organic semiconductor. In addition, we show that surface charges generated by Au penetration into pentacene can cause plateaus in the QSCV curves. A behavioral PSpice model is also presented which allows QSCV simulations of OTFTs to be performed.