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Two-dimensional electrical modeling of thermoelectric devices considering temperature-dependent parameters under the condition of nonuniform substrate temperature distribution

机译:在基板温度分布不均匀的情况下考虑温度相关参数的热电设备的二维电学建模

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摘要

Since more aggressive thermal solutions, than would be required for uniform heating, are highly desired. Thermoelectric devices are regarded as an available thermal solution for high power electronic packages like processors. In this paper, a steady-state numerical model is derived for thermoelectric coolers (TECs) with parameters controlled by two-dimensional thermal profiles. Using the thermoelectric duality, we propose an improved electrical model with temperature-dependent parameter distribution in the presence of multi-couple pellets. Both electrical element and thermal behavior are simulated based on this improved model with TEC parameters modified according to the nonuniform temperature effects. The results demonstrate an excellent agreement with numerical calculation and the proposed electrical model. It proves that thermal profiles in the underlying silicon substrate have a linear effects on the temperature at the cold side of TECs. In addition, the optimum value of the temperature difference exhibits a negative interrelation with the electrical current flowing through TECs under a fixed hot junction temperature.
机译:由于非常需要比均匀加热所需的更激进的热解决方案。对于诸如处理器之类的大功率电子封装,热电设备被视为可用的散热解决方案。在本文中,推导了具有二维热剖面控制参数的热电冷却器(TEC)的稳态数值模型。利用热电对偶性,我们提出了一种在存在多对颗粒的情况下具有温度相关参数分布的改进电模型。在此改进模型的基础上模拟了电气元件和热行为,并根据不均匀的温度效应修改了TEC参数。结果表明与数值计算和提出的电气模型具有良好的一致性。证明了下面的硅衬底中的热分布对TEC冷端的温度具有线性影响。此外,在固定的热结温度下,温差的最佳值与流经TEC的电流呈负相关关系。

著录项

  • 来源
    《Microelectronics journal》 |2013年第3期|270-276|共7页
  • 作者单位

    Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;

    Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;

    Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;

    Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;

    Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;

    Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;

    Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    thermoelectric duality; TECs; setbeck; nonuniform substrate temperature; temperature-dependent parameters;

    机译:热电对偶TECs;塞贝克基板温度不均匀温度相关参数;

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