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机译:使用CMOS环形振荡器的电荷泵测试技术解决泄漏问题
Univ Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Univ Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China|Univ Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Univ Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China|Univ Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Univ Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Univ Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Univ Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Charge pumping (CP); Tunneling current; EOT; MOSFET; Ring oscillator;
机译:使用高频片上环形振荡器电荷泵技术的5.8- $ hbox {rm {AA}} $ EOT p-MOSFET的接口陷阱表征
机译:SOI CMOS IC中的泄漏电流综述:对参数测试技术的影响
机译:使用泄漏控制技术对低压CMOS电路进行有效的IDDQ测试
机译:CMOS温度传感器使用电流饥饿的环形振荡器,用于低功耗和低泄漏IOT应用
机译:多米诺骨牌CMOS电路中的电荷共享和泄漏减少
机译:CMOS电压控制振荡器的开关偏置技术
机译:使用功率门控技术审查低功耗CMOS电荷泵,以减少泄漏功率
机译:具有电荷泄漏补偿帧差和和输出的CmOs成像器