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CMOS Temperature Sensor Using A Current Starved Ring Oscillator For Low Power And Low Leakage IOT Applications

机译:CMOS温度传感器使用电流饥饿的环形振荡器,用于低功耗和低泄漏IOT应用

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This paper presents a CMOS temperature sensor working at sub-threshold voltage (Sub-V_(Th)) for ultra low power applications. The sensor consists of a proportional-to-absolute-temperature (PTAT) current element that starves a current starved ring oscillator (CSRO). Since the circuit is designed in Sub-V_(Th), it enables ultra low power applications. But at the same time it becomes highly vulnerable to variations due to changes in process thereby resulting circuit currents to vary from die to die. An architecture is proposed where a bit-weighted current mirror (BWCM) is incorporated with CSRO to mitigate the effect due to process variations in the PTAT current. Lastly we have integrated the CSRO with a frequency to digital converter that converts the oscillator output signal into digital bits. Designing of the temperature sensor system is done in 180nm CMOS technology. The output frequency of the CSRO was found to be 50 Mhz. The sensor is operated at a V_(DD) of 0.2V and the power consumed is 3.75 pW.
机译:本文介绍了用于超低功率应用的子阈值电压(Sub-V_(TH))的CMOS温度传感器。传感器由比例到绝对温度(PTAT)电流元件组成,该电流元件恒定饥饿的环形振荡器(CSRO)。由于电路设计为Sub-V_(TH),因此它可以实现超低功率应用。但同时,由于过程的变化,它变得非常容易受到变化,从而导致电路电流因芯片而变化而变化。提出了一种架构,其中位加权电流镜(BWCM)与CSRO合并,以减轻由于PTAT电流的处理变化而导致的效果。最后,我们已经将CSRO集成了与数字转换器的频率,将振荡器输出信号转换为数字位。温度传感器系统的设计是在180nm CMOS技术中完成的。发现CSRO的输出频率为50 MHz。传感器在0.2V的V_(DD)下操作,功耗为3.75 PW。

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