Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

摘要

For a realistic simulation of sputtering processes and the topography changes associated, we combined the 3-D topography simulator ANETCH with the Monte-Carlo ion implantation program MC_SIM. The coupling between the programs provides the possibility to study the results of physical sputtering processes for nearly arbitrary ion/target combinations without a priori knowledge about the respective yield from experiments. As a first application, simulations were carried out to optimize process parameters of sputtering experiments. In a second application, the topography of a trench after FIB preparation is compared to simulations. The side-wall evolution at an edge due to ion irradiation is studied as a third application.