Ni_xPt_(1-x)Si/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation

摘要

We demonstrate tuning of the Schottky barrier height, Φ_B of nickel-platinum alloy silicide (Ni_xPt_(1-x)Si) contacts on n-type silicon by segregating sulfur at the silicide/Si interface. It is shown that while there is negligible effect of sulfur on the thermal stability and silicide resistance, extremely small barrier height values of 0.05-0.07 eV at the silicide/Si interface can be achieved by sulfur segregation.