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Dissolution and electrochemical impedance spectroscopy studies of thin copper oxide films on copper in semi-aqueous fluoride solutions

机译:半氟化水溶液中铜上氧化铜薄膜的溶解和电化学阻抗谱研究

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摘要

The selective dissolution of thin copper oxide films grown on copper in semi-aqueous formulations containing dimethyl sulfoxide (DMSO), ammonium fluoride (NH_4F) and water was studied. Optimization of the formulations was carried out by systematic evaluation of the effect of solvent content and pH on the removal rates of copper oxide films and selectivity towards copper and carbon doped oxide (CDO) low k dielectric film. Copper oxide removal rate of ~180 A/min with a selectivity of ~130:1 towards copper and ~20:l selectivity towards CDO was obtained in a formulation containing 29% DMSO, 1% NH_4F and 70% H_2O at pH 4. Electrochemical impedance spectroscopy studies were performed on this system and the data were analyzed to characterize the copper oxide/electrolyte interface with the ultimate objective of developing an end point detection technique for copper oxide removal.
机译:研究了在含二甲基亚砜(DMSO),氟化铵(NH_4F)和水的半水配方中铜上生长的氧化铜薄膜的选择性溶解。通过系统评估溶剂含量和pH对氧化铜膜去除速率以及对铜和碳掺杂氧化物(CDO)低k介电膜的选择性的影响,对配方进行了优化。在pH为4的含29%DMSO,1%NH_4F和70%H_2O的配方中,获得的氧化铜去除速率为〜180 A / min,对铜的选择性为〜130:1,对CDO的选择性为〜20:l。在该系统上进行了阻抗谱研究,并分析了数据以表征氧化铜/电解质界面,最终目的是开发一种用于去除氧化铜的终点检测技术。

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