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Patterning of a-Fe_2O_3 nanowires by pressing a microstructured mold and their field-emission properties

机译:压制微结构模具对a-Fe_2O_3纳米线进行构图及其场发射特性

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摘要

We patterned α-Fe_2O_3 nanowires by a simple pressing method and investigated their field emission properties. We synthesized α-Fe_2O_3 nanowires from a sputtered thin Fe film. Fe films (thicknesses: 150. 300, 650 and 1700 nm) were annealed from room temperature to 375 °C for 1 min and maintained at a temperature of 375 °C for 0-60 min. The length of the nanowires increased with the annealing time and thickness of the Fe films. We pressed a microstructured mold onto the nanowires and patterned the nanowires with an island array. The field-emission current of the nanowires patterned by pressing a mold was higher than that of nonpressed nanowires.
机译:我们通过简单的压制方法对α-Fe_2O_3纳米线进行了构图,并研究了它们的场发射特性。我们从溅射的Fe薄膜合成了α-Fe_2O_3纳米线。将Fe膜(厚度:150。300、650和1700 nm)从室温退火到375°C持续1分钟,并在375°C的温度下保持0-60分钟。纳米线的长度随着退火时间和Fe膜厚度的增加而增加。我们将微结构化的模具压在纳米线上,并用岛状阵列对纳米线进行构图。通过压制模具而图案化的纳米线的场发射电流高于未压制的纳米线的场发射电流。

著录项

  • 来源
    《Microelectronic Engineering》 |2011年第8期|p.2697-2699|共3页
  • 作者单位

    Department of Mechanical Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Mechanical Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Mechanical Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Mechanical Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    α-x-fe_2o_3 nanowires; patterning; press; field emission;

    机译:α-x-fe_2o_3纳米线;构图;压制;场发射;

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