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机译:溅射Ge-on-Si异质外延pn结:纳米结构,界面形态和光电性能
CoreCom, via G. Colombo. 81, 20133 Milano. Italy;
CoreCom, via G. Colombo. 81, 20133 Milano. Italy;
CoreCom, via G. Colombo. 81, 20133 Milano. Italy;
Research Institute for Technical Physics and Materials Science, Konkoly-Thege M. lit 2.9-33, H-1121 Budapest, Hungary;
Research Institute for Technical Physics and Materials Science, Konkoly-Thege M. lit 2.9-33, H-1121 Budapest, Hungary;
Laboratorio MDM, IMM-CNR, via C. Olivetti 2, 20041 Agrate Bhanza (MB), Italy;
Politecnico di Milano, Dept. of Electronics and Information, via Ponzio 34-5, 20133 Milano, Italy;
Politecnico di Milano, Dept. of Energy, via Ponzio 34-3, 20133 Milano, Italy;
germanium thin films; dc magnetron sputtering; ge-on-si heteroepitaxy; tem; ge optical properties; ge photodetectors;
机译:Si(100)上异质外延溅射Ge:纳米结构和界面形态
机译:直流磁控溅射异质外延Ge-on-Si
机译:具有由飞秒激光和次级溅射制造的良好光电性能的纳米结构,在ITO膜上
机译:通过溅射分析不同基板温度下的无定形TiO_2的光电性能和表面形态
机译:染料-半导体激光器界面上的光电效应的结理论。
机译:通过磁控溅射制备TE-SB2SE3薄膜的结构形态和光电性能
机译:通过DC磁控溅射的异质外延Ge-on-si
机译:通过mOCVD和RF溅射制备的srTiO(sub 3)(100)上异质外延pb(Zr(sub 0.35)Ti(sub 0.65))O(sub 3)/ srRuO(sub 3)多层薄膜的结构和性质