机译:通过一种新颖的形成技术制造的高性能Ge超浅结,该技术采用旋涂掺杂剂和激光退火技术,适用于10 nm以下的技术应用
Zhejiang Univ, Coll Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310013, Zhejiang, Peoples R China;
Zhejiang Univ, Coll Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310013, Zhejiang, Peoples R China;
Zhejiang Univ, Coll Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310013, Zhejiang, Peoples R China|Nanjing Univ, State Key Lab Solid State Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, State Key Lab Solid State Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China;
Zhejiang Univ, Coll Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310013, Zhejiang, Peoples R China;
Nanjing Univ, State Key Lab Solid State Microstruct, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China|Nanjing Univ, Sch Elect Sci & Engn, 22 Hankou Rd, Nanjing 210093, Jiangsu, Peoples R China;
Zhejiang Univ, Coll Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310013, Zhejiang, Peoples R China;
Zhejiang Univ, Coll Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310013, Zhejiang, Peoples R China|Zhejiang Univ, State Key Lab Silicon Mat, 38 Zheda Rd, Hangzhou 310013, Zhejiang, Peoples R China;
Laser annealing; Spin-on dopant; Germanium; junction;
机译:纳米技术CMOS应用等离子掺杂和准分子激光退火的超浅结形成
机译:非熔融激光尖峰退火形成超浅结及其在65 nm节点中互补金属氧化物半导体器件中的应用
机译:超浅结形成过程中B掺杂原子和Si间隙与SiO_2膜的相互作用
机译:通过掺杂剂隔离降低亚10 nm超浅NiGe / n-Ge肖特基结中的结漏电流
机译:带有旋涂掺杂剂的微米和纳米柱上浅p-n结的形成,用于太阳能电池。
机译:使用选择性激光烧结技术制造的金属陶瓷冠的边缘和内部间隙的评估:二维和三维复制技术
机译:脉冲激光退火,用于形成用于纳米级金属氧化物半导体技术的超浅线
机译:用于太阳能电池结形成的离子注入Cz硅的激光退火