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A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads

机译:预测弯曲和拉伸载荷下微弯压阻效应的模型

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This paper proposes a model for predicting the piezoresistive effect in microflexures experiencing bending stresses. Linear models have long existed for describing piezoresistivity for members in pure tension and compression. However, extensions of linear models to more complex loading conditions do not match with experimental results. A second-order model to predict piezoresistive effects in tension, compression, and more complex loading conditions is proposed. A reduced form of the general second-order model is presented for thin flexures in bending. A three-step approach is used to determine the piezoresistive coefficients for this reduced-form model. The approach is demonstrated for two sets of $n$-type polysilicon. The predictive ability of the model is investigated by comparing the results to the experimental results using the new piezoresistive model and coefficients. One of the ways to implement the model is with multiphysics finite element analysis (FEA). The piezoresistive FEA for flexures algorithm is a FEA implementation of the unidirectional form of the model for flexures. The results presented in this paper are for the simplified cases of long thin flexures experiencing bending and axial loads. This new model could contribute to optimized sensors and feedback control of microdevices, nanopositioning, and self-sensing microdevices.$hfill$ [2007-0052]
机译:本文提出了一个模型,用于预测在承受弯曲应力的微弯曲中的压阻效应。长期存在用于描述构件在纯拉伸和压缩状态下的压阻的线性模型。但是,将线性模型扩展到更复杂的加载条件与实验结果不匹配。提出了一种用于预测拉伸,压缩和更复杂的载荷条件下的压阻效应的二阶模型。对于弯曲中的细小弯曲,提出了一般二阶模型的简化形式。使用三步法确定此简化形式模型的压阻系数。两套$ n $型多晶硅对此方法进行了演示。通过使用新的压阻模型和系数将结果与实验结果进行比较,研究了模型的预测能力。实现模型的方法之一是使用多物理场有限元分析(FEA)。挠曲的压阻FEA算法是挠曲模型的单向形式的FEA实现。本文给出的结果适用于承受弯曲和轴向载荷的细长薄挠曲的简化情况。这个新模型可以为微设备,纳米定位和自感应微设备的优化传感器和反馈控制做出贡献。$ hfill $ [2007-0052]

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