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A Tunable Miniaturized RF MEMS Resonator With Simultaneous High $Q$ (500–735) and Fast Response Speed $(

机译:具有同步高$ Q $(500–735)和快速响应速度$(

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This paper reports on the design, fabrication, and measurement of a novel radio frequency (RF) microelectromechanical systems (MEMS) tunable all-silicon evanescent-mode cavity-based resonator that simultaneously achieves high quality factor and fast response speed. The resonator is based on a 1.5-mm-deep silicon-etched cavity attached to a gold-coated silicon substrate with an array of 75 185-$muhbox{m}$ -long 20-$muhbox{m}$-wide 1- $muhbox{m}$-thick gold beams. The 54- $hbox{mm}^{3}$ resonator is tunable from 15.2 GHz up to 16.5 GHz (analog tuning range) and up to 17.8-GHz range (digital tuning range) with an array of 75 MEMS fixed–fixed beams. The MEMS beams are biased against their own silicon substrate. This helps keep RF leakage at a minimum and permits high quality factors of 500–735 for the all-silicon configuration. By applying dynamic biasing waveforms, the MEMS tuners respond within 9 $muhbox{s}$ (actuation time) and 60 $muhbox{s}$ (release including settling time). To the best of the authors' knowledge, the presented resonator is more than 3 $times$ smaller, achieves nearly 30% higher average quality factor, and is at least 10–100$times$ faster than state-of-the-art resonators based on similar technology, implemented in similar frequency ranges.$hfill$ [2012-0122]
机译:本文报道了一种新型的射频(RF)微机电系统(MEMS)可调谐全硅e逝模腔谐振器的设计,制造和测量,该谐振器同时实现了高品质因数和快速响应速度。该谐振器基于一个深1.5毫米的硅刻蚀腔,该腔附着在一个镀金的硅基板上,该阵列具有75 185- $ muhbox {m} $-长20- $ muhbox {m} $-宽1- $ muhbox {m} $厚的金梁。 54- $ hbox {mm} ^ {3} $谐振器可在75个MEMS固定波束阵列中从15.2 GHz调谐到16.5 GHz(模拟调谐范围)和高达17.8 GHz范围(数字调谐范围)。 。 MEMS梁被偏压在它们自己的硅衬底上。这有助于将RF泄漏保持在最低水平,并为全硅配置提供500–735的高质量系数。通过施加动态偏置波形,MEMS调谐器可在9个(致动时间)和60个(致动时间,包括建立时间)之内做出响应。据作者所知,所提供的谐振器比最先进的谐振器小3倍以上,平均质量系数提高近30%,并且至少快10-100倍基于相似的技术,在相似的频率范围内实现。$ hfill $ [2012-0122]

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