Gallium-Doped Piezoresistive Sensor With Optimized Focused Ion Beam Implantation

摘要

In this paper, we present the results of gallium implantation/doping in silicon using focused ion beam (FIB) to realize gallium (Ga) doped piezoresistive pressure sensor. We have performed optimization of various FIB parameters and demonstrated that with this approach, a gauge factors of about 100 and a sheet resistance of 1-2 kΩ /square can be achieved using optimized FIB doses in range of 5×1017 – 8×1018 ion/ m2 . The results open a novel and simple way of fabricating piezoresistors especially on nanoscale structures where lithography can be challenging. [2016-0178]