Method of implanting spatially controlled P-N junctions by focused ion beams containing at least two species

摘要

A desired part of a workpiece is irradiated with a focused ion beam which contains at least two species of impurity ions to-be-implanted exhibiting different spacial distributions of ion current densities. PPThus, regions respectively implanted with different species of impurity ions can be formed in a predetermined positional relationship at high precision.