Forming an interfacial oxide layer for high-k gate dielectrics using a single-wafer wet tool

摘要

Transistor gate stacks using high-k films are being introduced into pro-duction to address device-scaling re-quirements.1 The state of the silicon surface before the deposition of high-k materials such as HfO_2 and HfSiO is thermally and chemically grown silicon oxide interfacial layers have been inves-tigated by many research groups. Of all the films studied, silicon oxide is the most promising candidate because of its long history in the industry.