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首页> 外文期刊>Metallurgical and Materials Transactions B >Development of Mathematical Model for Prediction and Optimization of Particle Size in Nanocrystalline CdS Thin Films Prepared by Sol-Gel Spin-Coating Method
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Development of Mathematical Model for Prediction and Optimization of Particle Size in Nanocrystalline CdS Thin Films Prepared by Sol-Gel Spin-Coating Method

机译:溶胶-凝胶旋涂法制备纳米CdS薄膜的粒径预测与优化数学模型的建立

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Nanocrystalline CdS thin films have been prepared by the sol-gel spin-coating method. The influence of spin-coating process parameters such as, thiourea concentration (U), annealing temperature (A), rotational speed (S), and annealing time (T), and so on, on the properties of the prepared films have been studied. The experiments have been carried out based on four factor-five-level central composite designs with the full replication technique, and mathematical models have been developed using regression technique. The central composite rotatable design has been used to minimize the number of experimental parameters. The analysis of variance technique is applied to check the validity of the developed models. The developed mathematical model can be used effectively to predict the particle size in CdS nanocrystalline thin films at 95 pct confidence level. The results have been verified by depositing the films using the same condition. An ultraviolet-visible optical spectroscopy study was carried out to determine the band gap of the CdS nanocrystalline thin films. The band gap has been observed to depend strongly on particle size, and it indicated a blue shift caused by quantum confinement effects. The high-resolution transmission electron microscopy analysis showed the grain size of the prepared CdS film to be 6 nm. The main and interaction effects of deposition parameters on the properties of CdS nanocrystalline thin films also have been studied.
机译:通过溶胶-凝胶旋涂法已经制备了纳米晶CdS薄膜。研究了旋涂工艺参数如硫脲浓度(U),退火温度(A),转速(S)和退火时间(T)等对所制备薄膜性能的影响。 。实验是基于具有完全复制技术的四因子五级中央复合设计进行的,并且已经使用回归技术开发了数学模型。中央复合材料可旋转设计已用于最大程度地减少实验参数。应用方差分析技术来检验所开发模型的有效性。所开发的数学模型可以有效地用于预测CdS纳米晶体薄膜在95 pct置信度下的粒径。通过在相同条件下沉积薄膜来验证结果。进行了紫外可见光谱研究,以确定CdS纳米晶体薄膜的带隙。已经观察到带隙在很大程度上取决于粒径,并且它表明由量子限制效应引起的蓝移。高分辨率透射电子显微镜分析显示,所制备的CdS膜的晶粒尺寸为6nm。研究了沉积参数对CdS纳米晶薄膜性能的主要影响和相互作用。

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