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A mathematical model to predict the grain size of nanocrystalline CdS thin films based on the deposition condition used in the sol–gel spin coating method

机译:基于溶胶-凝胶旋涂法中使用的沉积条件预测纳米晶CdS薄膜晶粒尺寸的数学模型

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摘要

Design of experiment (DOE) based on central composite design (CCD) has been employed for the development of a mathematical model correlating the important process parameters like thiourea concentration (U), annealing temperature (A), rotational speed (S), and annealing time (T) of the spin coating process for the preparation of CdS thin films. The experiments were conducted as per the design matrix. Nanocrystalline CdS thin films have been prepared using cadmium nitrate and thiourea as precursors by sol gel spin coating method using the results of the mathematical model. The prepared CdS films have been characterized and the crystal structure and grain size of the samples were analyzed using X-ray diffraction technique. The adequacy of the developed models was checked by analysis of variance (ANOVA) technique. The accuracy of prediction has been carried out by conducting confirmation test. Using this model, the main effect of process parameters on grain size of CdS films have been studied. These parameters were optimized to obtain minimum grain size using the Microsoft excel solver. The results have been verified by depositing CdS films using the optimized conditions. These films have been characterized using X-ray diffraction technique and the grain size is found to be 8.8 nm. The high resolution transmission electron microscopy (HRTEM) analysis showed the grain size of the prepared CdS film to be ∼7 nm. UV–vis spectroscopy analysis revealed that CdS films exhibited quantum confinement effect.
机译:已采用基于中央复合设计(CCD)的实验设计(DOE)来开发与重要工艺参数相关的数学模型,例如硫脲浓度(U),退火温度(A),转速(S)和退火时间(T)的旋涂工艺制备CdS薄膜。根据设计矩阵进行实验。利用数学模型的结果,通过溶胶凝胶旋涂法,以硝酸镉和硫脲为前体制备了纳米晶CdS薄膜。对制备的CdS薄膜进行了表征,并使用X射线衍射技术分析了样品的晶体结构和晶粒尺寸。通过方差分析(ANOVA)技术检查了开发模型的充分性。预测的准确性已通过进行确认测试来进行。使用该模型,研究了工艺参数对CdS薄膜晶粒尺寸的主要影响。使用Microsoft excel求解器对这些参数进行了优化,以获得最小的粒度。通过使用优化的条件沉积CdS膜已验证了结果。这些膜已使用X射线衍射技术进行了表征,发现粒径为8.8 nm。高分辨率透射电子显微镜(HRTEM)分析显示,所制备的CdS膜的晶粒尺寸约为7 nm。紫外可见光谱分析表明,CdS薄膜表现出量子约束效应。

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