MEASUREMENT OF THE THERMAL PARAMETERS OF SEMICONDUCTOR PRODUCTS USING PULSE-AMPLITUDE MODULATION OF THE HEATING POWER

V. A. Sergeev; V. V. Yudin

首页> 外文期刊>Measurement techniques >MEASUREMENT OF THE THERMAL PARAMETERS OF SEMICONDUCTOR PRODUCTS USING PULSE-AMPLITUDE MODULATION OF THE HEATING POWER

【24h】

MEASUREMENT OF THE THERMAL PARAMETERS OF SEMICONDUCTOR PRODUCTS USING PULSE-AMPLITUDE MODULATION OF THE HEATING POWER

机译：利用加热功率的脉冲幅度调制来测量半导体产品的热参数

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Estimates of the systematic error in measuring a temperature-sensitive parameter of a semiconductor article are obtained. These errors are due to transient electrical and thermal processes which occur when the article is switched from the heating mode to the measurement mode. It is shown that the use of pulse-amplitude modulation of the heating power enables these errors to be reduced considerably.

机译：获得了在测量半导体制品的温度敏感参数时的系统误差的估计。这些误差是由于在将物品从加热模式切换到测量模式时发生的瞬时电和热过程所致。结果表明，使用加热功率的脉冲幅度调制使这些误差大大减小。

著录项

来源
《Measurement techniques》 |2010年第6期|p.679-685|共7页
作者
V. A. Sergeev; V. V. Yudin;
展开▼
作者单位

Ulyanovsk Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Ulyanovsk, Russia;

rnUlyanovsk Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Ulyanovsk, Russia;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
semiconductor products; thermal parameters; switching mode; heating power; temperature-sensitive parameter; systematic error; pulse-amplitude modulation;

机译：半导体产品;热参数;切换模式加热功率温度敏感参数;系统错误;脉冲幅度调制;
入库时间 2022-08-17 13:11:15

相似文献

外文文献
中文文献
专利

1. Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold - art. no. 193306 [J] . Cavalleri A., Rose-Petruck C., Jimenez R., Physical Review, B. Condensed Matter . 2001,第19期

机译：半导体中激光加热的超快X射线测量：确定熔化阈值的参数-艺术。没有。 193306
2. Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold - art. no. 193306 [J] . Cavalleri A., Rose-Petruck C., Jimenez R., Physical Review, B. Condensed Matter . 2001,第19期

机译：半导体中激光加热的超快X射线测量：确定熔化阈值的参数-艺术。没有。 193306
3. Measurements of wood pellets self-heating kinetic parameters using isothermal calorimetry [J] . Wendi Guo, Ken Trischuk, Xiaotao Bi, Biomass & bioenergy . 2014,第apra期

机译：用等温量热法测量木屑颗粒自热动力学参数
4. Self-heating parameter extraction of power MOSFETs based on transient drain current measurements and on the 2-cell self-heating model [C] . Koh R. Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on . 2012

机译：基于瞬态漏极电流测量和2单元自发热模型的功率MOSFET自发热参数提取
5. Evaluating electronic decay in wide band gap semiconductors using contactless thermally stimulated lifetime measurements. [D] . Kessick, Royal Franklin, III. 2002

机译：使用非接触热激励寿命测量来评估宽带隙半导体中的电子衰减。
6. Thermal Signature Measurements for Ammonium Nitrate/Fuel Mixtures by Laser Heating [O] . Ashot Nazarian, Cary Presser -1

机译：激光加热测定硝酸铵/燃料混合物的热特征
7. Thermal conductivity and specific heat measurements for power electronics packaging materials effective thermal conductivity steady state and transient thermal parameter identification methods / [O] . Madrid Lozano Francesc 2006

机译：电力电子封装材料的热导率和比热测量有效的热导率稳态和瞬态热参数识别方法/
8. Measurement of limiter heating due to fusion product losses during high fusion power deuterium-tritium operation of TFTR [R] . Janos, A. , Owens, D. K. , Darrow, D. , 1995

机译：在TFTR的高聚变功率氘 - 氚操作期间由于聚变产物损失导致的限制器加热的测量

MEASUREMENT OF THE THERMAL PARAMETERS OF SEMICONDUCTOR PRODUCTS USING PULSE-AMPLITUDE MODULATION OF THE HEATING POWER

摘要

著录项

相似文献

相关主题

期刊订阅