DISTORTION OF THE PROFILE OF SURFACE RELIEF ELEMENTS OF SINGLE-CRYSTAL SILICON CAUSED BY CONTAMINATION IN A LOW-VOLTAGE SCANNING ELECTRON MICROSCOPE

V. P. Gavrilenko; A. Yu. Kuzin; V. B. Mityukhlyaev; A. V. Rakov; P. A. Todua; M. N. Filippov; V. A. Sharonov

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DISTORTION OF THE PROFILE OF SURFACE RELIEF ELEMENTS OF SINGLE-CRYSTAL SILICON CAUSED BY CONTAMINATION IN A LOW-VOLTAGE SCANNING ELECTRON MICROSCOPE

机译：低电压扫描电子显微镜中污染引起的单晶硅表面释放元素的形变

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This is a study of the influence of contamination in an S-4800 scanning electron microscope at electron energies of 1 keVon the profile of the surface relief elements of an MShPS-2.0K standard gauge. The observed width of the upper base of the relief elements is found to increase with electron irradiation dose in different irradiation modes.

机译：这项研究是在S-4800扫描电子显微镜中，当电子能量为1 keV时，对MShPS-2.0K标准量规的表面凸凹元件轮廓的影响。发现在不同的照射模式下，观察到的浮雕元件的上基底的宽度随着电子照射剂量而增加。

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来源
《Measurement techniques》 |2013年第3期|235-239|共5页
作者
V. P. Gavrilenko; A. Yu. Kuzin; V. B. Mityukhlyaev; A. V. Rakov; P. A. Todua; M. N. Filippov; V. A. Sharonov;
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作者单位

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV), Moscow, Russia;

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV), Moscow, Russia;

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV), Moscow, Russia;

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV), Moscow, Russia;

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV), Moscow, Russia;

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences (IONKh RAN), Moscow, Russia;

Research Center for the Study of the Properties of Surfaces and Vacuum (NITsPV), Moscow, Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
contamination; low-voltage scanning electron microscope (SEM); relief elements; electron irradiation dose;

机译：污染;低压扫描电子显微镜（SEM）;救济要素;电子辐照剂量;
入库时间 2022-08-17 13:11:11

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1. INFLUENCE OF CONTAMINATION IN SCANNING ELECTRON MICROSCOPES ON THE PROFILE OF RELIEF ELEMENTS IN MONOCRYSTALLINE SILICON [J] . V. P. Gavrilenko, A. Yu. Kuzin, V. B. Mityukhlyaev, Measurement techniques . 2012,第9期

机译：扫描电子显微镜中污染对单晶硅中释放元素特征的影响
2. Measurements of Linear Dimensions of Silicon Nanorelief Elements with a Near-Rectangular Profile by Defocusing the Electron Probe of a Scanning Electron Microscope [J] . K. A. Valiev, V. P. Gavrilenko, E. N. Zhikharev, Russian Microelectronics . 2010,第6期

机译：通过使扫描电子显微镜的电子探针散焦来测量具有近矩形轮廓的硅纳米浮雕元件的线性尺寸
3. Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers [J] . Koichi Higashimine, Koichi Koyama, Keisuke Ohdaira, Journal of Vacuum Science & Technology . 2012,第3期

机译：通过催化化学气相沉积制备的非晶硅插入层的扫描透射电子显微镜分析，导致晶体硅晶片上的表面重组速度低
4. Measurements of linear sizes of relief elements in the nanometer range using a scanning electron microscope [C] . V. P. Gavrilenko, M. N. Filippov, Yu. A. Novikov, . 2007

机译：使用扫描电子显微镜在纳米范围内测量浮雕元素的线性尺寸
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机译：超高真空扫描隧道显微镜的开发。溴暴露下硅（111）和锗（111）表面蚀刻的扫描隧道显微镜研究
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DISTORTION OF THE PROFILE OF SURFACE RELIEF ELEMENTS OF SINGLE-CRYSTAL SILICON CAUSED BY CONTAMINATION IN A LOW-VOLTAGE SCANNING ELECTRON MICROSCOPE

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