Behaviour of Bombarded Ar at Surface and Bonded Interface of Copper

摘要

Argon ion bombardment is known to be effective in removing all surface contaminations and oxides and improving the quality of diffusion bonds. However, recent work has shown that the accelerating voltage used during the ion bom- bardment significantly affected the bond strength. This work has been carried out to investigate the behaviour of argon at the surface and bonded copper interface After argon ion bombardment. To investigate changes at the surface and the bonded interface, surface composition, Surface morphology, gas in voids at the interface were monitored using Auger spectroscopy, reflection high energy elec- Tron diffraction (RHEED), and mass spectroscopy.