机译:低表面粗糙度GaAs / Si薄膜沉积在MBE中使用三步生长方法
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China;
Molecular beam epitaxy; GaAs/Si; three-step growth method;
机译:MBE生长CdTe / GaAs(211)B的表面粗糙度的椭圆光谱法估计
机译:自组装InGaAs量子点的MBE生长在邻近(111)B GaAs表面上沿准周期多原子步骤排列
机译:
机译:使用近似低阶ODE模型的薄膜生长过程中表面粗糙度的反馈控制
机译:低能多原子离子束在聚合物表面沉积碳氟化合物薄膜。
机译:用于自然-SiOx / Si(111)底物的低温诱导孔形成用于自催化的GaAs纳米线的生长
机译:MBE生长CdTe / GaAs(211)B的表面粗糙度的椭圆光谱法估计
机译:透明薄膜晶体管的低成本沉积方法