The Characterization of Semiconductor Crystal Sn(Se_(0.8)Te_(0.2)) Prepared by Bridgman Technique for Solar Cell

摘要

These study aims determine the characterization of structure and chemical composition of crystal Sn(Se_(0.8)Te_(0.2)). The growth of crystal Sn(Se_(0.8)Te_(0.2)) is obtained by preparation outcome through Bridgman Technique. Hence, characterized by using the XRD (X-Ray Diffraction) for to determine the crystal structure, SEM (Scanning Electron Microscopy) to determine the surface morphology, and EDAX (Energy Dispersive Analysis of X-ray) to determine the chemical composition. The four samples are characterized results indicate that crystal Sn(Se_(0.8)Te_(0.2)) has orthorhombic structure with the results of the samples I and III have the highest intensity. SEM characterization result for sample I and III indicate that the formation of crystal Sn(Se_(0.8)Te_(0.2)) is characterized by the presence of grains. Based on the results of EDAX, it is known that the crystal Sn(Se_(0.8)Te_(0.2)) contains elements of Sn, Se, and Te with a percentage of the chemical composition of the sample I is Sn = 39.85%, Se = 36.09%, and Te = 2.57 %. Comparison the molarity of the sample I is Sn: Se: Te is 1: 0.90: 0.10.