...
首页> 外文期刊>Materials science forum >The Role of Reduced Graphene Oxide Concentration as Ablated Material on Optical Properties of Graphene Quantum Dots
【24h】

The Role of Reduced Graphene Oxide Concentration as Ablated Material on Optical Properties of Graphene Quantum Dots

机译:氧化石墨烯作为烧蚀材料的浓度降低对石墨烯量子点光学性质的作用

获取原文
获取原文并翻译 | 示例
           

摘要

We report the synthesize of Graphene Quantum Dots (GQDs) using ablation method with reduced Graphene Oxide (rGO) solution as a starting material. We have varied the concentration of rGO as following: 0.5, 2, 5 mg/ml and then have ablated them using 800 nm Ti-Sapphire femtosecond laser to obtain GQDs. From the UV-Vis data, we observed that the more concentration of rGO is being ablated, the more secondary absorption peak at 255.1 nm appeared. This secondary absorption peak is a characteristic of n-π* bonding due to the presence of oxygen defect which occurs as a result of the interaction between the laser and the water in rGO solution. We conclude that the population of oxigen defect in GQDs is increasing, following the increase of rGO concentration and could alter the optical properties of GQD. On the other hand, using Tauc’s plot, we confirm that the increase of rGO concentration as the ablated material does not alter GQDs optical band gap. However, it will slightly reduce both, direct and indirect Oxygen defect related optical band gap.
机译:我们报道了使用还原法氧化石墨烯(rGO)溶液作为起始材料的烧蚀方法合成石墨烯量子点(GQDs)。我们改变了rGO的浓度,如下所示:0.5、2、5 mg / ml,然后使用800 nm钛-蓝宝石飞秒激光烧蚀它们以获得GQD。从UV-Vis数据中,我们观察到rGO的浓度被消除得越多,在255.1 nm处出现的次级吸收峰就越多。由于存在氧缺陷,该次吸收峰是n-π*键的特征,氧缺陷是由于激光与rGO溶液中水之间的相互作用而产生的。我们得出的结论是,随着rGO浓度的增加,GQD中的氧气缺陷人群正在增加,并且可能会改变GQD的光学性质。另一方面,使用Tauc的图,我们确认作为烧蚀材料的rGO浓度的增加不会改变GQD的光学带隙。但是,它将略微减少与氧气缺陷有关的直接和间接光学带隙。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号