Recent advances on kinetic analysis of solder joint reactions in 3D IC packaging technology

摘要

We review five solder joint reactions in 3D IC packaging technology which are of wide interest: (1) Scallop-type growth of Cu6Sn5 in solid-liquid interdiffusion reaction, (2) Whisker-type growth of Sn crystals at room temperature, (3) Layer-type intermetallic compound (IMC) growth in solid state aging, (4) Porous-type growth of Cu3Sn in mu-bumps, and (5) Pillar-type growth of Cu/Sn IMC down to 1 mu m in diameter. The first two have been well covered in books and reviews on solder joint technology, so only certain specific comments will be given here. On the other three, the layer-type IMC growth has been a long standing kinetic problem due to the extremely small concentration gradient across a stoichiometric IMC, but it has been resolved now, following Wagner's approach. The porous-type Cu3Sn was found in 2014. Kinetically, it is a complete cellular precipitation, containing a set of lamellar pores. It is rare because up to now all cellular precipitations are incomplete. The pillar-type Cu/Sn reactions down to 1 mu m in diameter were carried out in 2016. Owing to a large surface/volume ratio, the reaction is controlled by surface diffusion, accompanied by interstitial diffusion of Cu in Sn.