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Surface analytical studies of interfaces in organic semiconductor devices

机译:有机半导体器件界面的表面分析研究

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Surface and interface analytical studies have generated critical insight of the fundamental processes at interfaces involving organic semiconductors. I will review surface analytical studies of interface formation of organic semiconductors with different materials. Metal/organic interface is a focus of both device engineering and basic science, since it is a key factor in nearly all important aspects of device performances, including operation voltages, degradation, and efficiency. I will discuss metal-organic interface dipole formation, charge transfer, chemical reaction, energy level alignment, in-diffusion, quenching of luminescence and possible recovery of it. The effect of the insertion of ultra-thin interlayers such as LiF and doping by alkali metals will also be discussed. In organic/organic interface, the energy offset between the two dissimilar organic materials is vitally important to efficient device operation of organic light emitting diodes (OLED), as well as change separation at donor-acceptor interface in organic photovoltaic devices (OPV). I will discuss the interface energy level alignment, band bending, Debye screening, and charge separation dynamics as observed in surface analytical studies, and the implications to OLED and OPV. The interfaces of OSCs with other inorganic materials are also important. For organic thin film transistors (OTFT), the electronic properties of the interface formed between the organic and the dielectric strongly influences the current-voltage characteristics, as the electronic activity has been shown to occur primarily at the interface between the dielectric and the organic materials. 1 will review the interface formation of OSCs with dielectric materials and with indium-tin-oxide (ITO), a material whose transparency and conductivity make it indispensable for a number of optoelectronic applications and whose electronic properties and energy level alignment with organics have proven dramatically altered by surface treatments.
机译:表面和界面分析研究对涉及有机半导体的界面的基本过程产生了重要的见解。我将回顾不同材料对有机半导体界面形成的表面分析研究。金属/有机界面是设备工程和基础科学的重点,因为它是设备性能几乎所有重要方面的关键因素,包括工作电压,性能和效率。我将讨论金属-有机界面偶极子的形成,电荷转移,化学反应,能级对准,扩散,发光淬灭及其可能的恢复。还将讨论插入超薄中间层(如LiF)和碱金属掺杂的影响。在有机/有机界面中,两种不同有机材料之间的能量偏移对于有机发光二极管(OLED)的有效器件操作以及有机光伏器件(OPV)的施主-受主界面的间距变化至关重要。我将讨论表面分析研究中观察到的界面能级对准,能带弯曲,德拜屏蔽和电荷分离动力学,以及对OLED和OPV的影响。 OSC与其他无机材料的界面也很重要。对于有机薄膜晶体管(OTFT),在有机和电介质之间形成的界面的电子性能会强烈影响电流-电压特性,因为已证明电子活性主要发生在电介质和有机材料之间的界面上。 1将回顾OSC与介电材料和氧化铟锡(ITO)的界面形成,该材料的透明性和导电性使其成为许多光电应用必不可少的材料,并且其电子特性和能级与有机物的对齐已得到证明通过表面处理改变。

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