The growth, properties and application of reactively sputtered nickel oxide thin films in all thin film electrochromic devices

摘要

Nickel oxide (NiO_X), widely used as ion storage layer in all thin film electrochromic devices (ATF-ECDs), was deposited by reactive direct current (DC) magnetron sputtering at different oxygen fluxes (F_(O2)). The reactive DC magnetron sputtering processes were finely monitored and controlled by the target voltages. The growth model and material properties were systematically investigated. The electrochromic properties for NiO_X thin films and corresponding ATF-ECDs were studied as well. The optimal ATF-ECD (SLG/ITO/NiO_X/Ta_2O_5/WO_3/ITO) was achieved with a NiO_X ion storage layer reactively sputtered at a F_(O2) of 15 seem. The electrochromic mechanisms was discussed in details.