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Preparation of ultra-high purity CdTe single crystals

机译:超高纯CdTe单晶的制备

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摘要

High-purity and quality CdTe single crystals are very important for their basic study, as well as practical applications. For this reason, Cd was purified by vacuum distillation (VD) and overlap zone-melting (OZM) method, and Te was purified by normal freezing method. Refined Cd was evaluated by glow discharge mass spectroscopy (GDMS) and residual resistivity ratio (RRR) measurement and Te was evaluated by low-temperature photoluminescence (PL) spectra. Results showed that refined Cd and Te have the purity of 6N-up. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical Bridgman technique. The crystals were characterized by low temperature high-resolution PL spectroscopy. Only a sharp peak at 1.5896eV was detected in exciton emission region. The full width at half-maximum (FWHM) is less than 0.31 meV. These results indicate that the CdTe crystals are of extremely high-purity and quality.
机译:高纯度和高质量的CdTe单晶对于其基础研究和实际应用非常重要。因此,Cd通过真空蒸馏(VD)和重叠区熔融(OZM)方法纯化,而Te通过常规冷冻方法纯化。通过辉光放电质谱法(GDMS)和残留电阻率比(RRR)测量对精制的Cd进行评估,并通过低温光致发光(PL)光谱对Te进行评估。结果表明,精制的Cd和Te具有6N-up的纯度。以提纯的Cd和Te为原料,通过传统的垂直Bridgman技术制备了极高纯度的CdTe单晶。晶体通过低温高分辨率PL光谱法表征。在激子发射区域仅检测到1.5896eV处的尖峰。半最大全宽(FWHM)小于0.31 meV。这些结果表明CdTe晶体具有极高的纯度和质量。

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