机译:物理气相传输法生长的6H-SiC的电学表征
Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46.02-668 Warsaw, Poland;
Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46.02-668 Warsaw, Poland;
Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46.02-668 Warsaw, Poland;
Institute of Electron Technology, Department of Semiconductor Processing for Photonics, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland Institute of Electronic Materials Technology, ul. Wolczynska 133, 01 -919 Warsaw. Poland;
deep level defects; DLTS; silicon carbide;
机译:拉曼光谱研究氢辅助物理气相传输法生长的6H-SiC晶体的电学性质
机译:氢辅助物理气相传输生长的6H-SiC晶体的性能
机译:混合物理化学气相传输法生长的块状SiC晶体的电学性质和深能谱
机译:物理气相传输(PVT)方法生长的6H-SiC单晶的初始改性
机译:化学计量对物理气相传输过程中生长的碳化硅电性能的影响
机译:物理蒸汽传输生长的散装铝合金单晶的X射线特征
机译:物理蒸汽运输法在6H-SIC种子上生长的晶体结构研究
机译:控制氧合成半绝缘金属有机气相外延Gaas的电学表征