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Controllable synthesis of Y doped AlN microtubes, prism-arrayed microstructures and microflowers via an improved DC arc discharge plasmai method

机译:通过改进的直流电弧放电等离子体法可控合成Y掺杂的AlN微管,棱镜排列的微结构和微花

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摘要

The yttrium doped AlN (AlN:Y) microtubes, prism arrayed microstructures and microflowers were fabricated through the direct reaction of Al:Y alloy and N-2 without extra catalyst. AlN microstructures can be controlled by varying deposition temperature or changing deposition area. The structure and morphology of AlN:Y microstructures were characterized by X-ray diffraction, scanning and transmission electron microscopy and Raman spectroscopy. The results indicate that Y3+ ions incorporate inside the AlN nanostructures. The photoluminescence spectra of the AlN:Y microstructures show strong defect-induced emissions in the visible range of 400-750 nm. Room-temperature ferromagnetism is observed in AlN:Y microstructures which is caused by high concentration of Al vacancies. The AlN:Y microstructures with interesting geometries possess excellent optical and magnetic properties, suggesting potential applications in optoelectronic and spintronic mlcrodevices.
机译:掺钇的AlN(AlN:Y)微管,棱镜排列的微结构和微花是通过Al:Y合金与N-2的直接反应而无需额外的催化剂制成的。可以通过改变沉积温度或改变沉积面积来控制AlN微结构。通过X射线衍射,扫描和透射电子显微镜以及拉曼光谱对AlN:Y显微组织的结构和形貌进行了表征。结果表明,Y3 +离子掺入了AlN纳米结构内部。 AlN:Y微结构的光致发光光谱在400-750 nm的可见光范围内显示出强烈的缺陷诱导发射。在AlN:Y显微组织中观察到室温铁磁性,这是由于Al空位浓度高引起的。具有有趣几何形状的AlN:Y微结构具有出色的光学和磁性能,表明在光电和自旋电子微器件中的潜在应用。

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