STRUCTURAL AND ELECTR1CAL PROPERTIES OF PLZT FILMS ON ITO-COATED GLASS PREPARED BY A SOL-GEL PROCESS

摘要

PLZT films prepared by a sol-gel process were fabricated on indium tin oxide (ITO)-coated glass substrates using rapid thermal annealing (RTA). The films crystallized into the perovskite phase when annealed at 750deg.C for 5 min. X-ray diffraction (XRD) and Raman spectroscopy results indicate that the morphotropic phase boundary of PLZT films shifts toward the Ti-rich side, in contrast to that of bulk ceramics. A dielectric constant of l270 for the 2/55/45 composition was the maximum value observed. With increasing Zr content in the 2 mol/100 La modified films, the coercive field decreased from 52.9 to 30 kV/cm and the remanent polarization increased from 22.7 to 50.6 uC/cm~2. Optical transmittance increased by increasing optical isotropy as the Zr con- tent ineffased.