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Microstructural, electrical and optical properties of indium tin oxide (ITO) nanoparticles synthesized by co-precipitation method

机译:共沉淀法合成的铟锡氧化物(ITO)纳米粒子的微结构,电学和光学性质

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摘要

In the present study, the synthesis of Tin doped indium oxide (ITO) nanopowder at different compositions (In/Sn = 0,5,10,15 at %) was carried out by co-precipitation method. The decomposition of precipitated indium tin acetylacetonate precursor to form lN_2O_3-SnO_2 (Sn_(1-x)In_xO_2) at 400 C was confirmed by the thermal and FTIR studies. The changes in strain and grain size of the synthesized particle with respect to dopant concentration were determined from the X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) images support to confirm the grain size. The optical properties on ITO nanoparticles were analyzed with UV-visible spectroscopy, and band gap was found to vary from 3.62 to 3.89 eV with Sn dopant concentration. This variation was ascribed to the quantum confinement effect.
机译:在本研究中,通过共沉淀法合成了不同组成(In / Sn = 0、5、10、15 at%)的掺锡氧化铟(ITO)纳米粉。通过热和FTIR研究证实了沉淀的乙酰丙酮锡铟锡前体在400℃下分解形成1N_2O_3-SnO_2(Sn_(1-x)In_xO_2)。从X射线衍射(XRD)分析确定合成颗粒的应变和晶粒尺寸相对于掺杂剂浓度的变化。透射电子显微镜(TEM)图像可用于确认晶粒尺寸。用紫外-可见光谱分析了ITO纳米颗粒的光学性能,发现带隙随Sn掺杂浓度的变化在3.62至3.89 eV之间。这种变化归因于量子约束效应。

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