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Synthesis of binary and multinary metal sulphides by precipitation and their characterisation

机译:沉淀法合成二元和多元金属硫化物及其表征

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CuS, In2S3, CuInS2 and CuGaS2 semiconductors have been synthesised in powder form by precipitation reaction using Na2S center dot 3H(2)O as a precipitating agent. Precipitated at about 313 K in aqueous medium, the powders of CuS crystallise in covellite (hexagonal) phase and those of In2S3, CuInS2 and CuGaS2 in tetragonal phase on heat treatment in argon atmosphere. The formation of CuS or In2S3 takes place due to the reaction between the metal and bisulphide ions in aqueous phase while that of CuInS2 or CuGaS2 involves solid state reaction between CuS and In2S3 or GaxSy during heat treatment and is accompanied with the evolution of SO2 gas. The powders are nearly monophasic, exhibit nanometric morphology and bear their respective stoichiometric compositions. The direct band gaps of CuS, In2S3, CuInS2 and CuGaS2 measure 2.06, 2.3,1.34 and 2.38 eV respectively. The method is simple and is extended to the synthesis of CuIn0.8Ga0.2S2 as well. (C) 2016 Elsevier Ltd. All rights reserved.
机译:通过使用Na2S中心点3H(2)O作为沉淀剂,通过沉淀反应以粉末形式合成了CuS,In2S3,CuInS2和CuGaS2半导体。在氩气气氛中热处理后,CuS粉末在水性介质中约313 K析出,结晶成硬沸石(六方)相,In2S3,CuInS2和CuGaS2的四方相结晶。 CuS或In2S3的形成是由于金属和二硫化物离子在水相之间的反应而发生的,而CuInS2或CuGaS2的形成涉及CuS和In2S3或GaxSy在热处理过程中的固态反应,并伴随有SO2气体的释放。粉末几乎是单相的,表现出纳米形态并且具有它们各自的化学计量组成。 CuS,In2S3,CuInS2和CuGaS2的直接带隙分别为2.06、2.3、1.34和2.38 eV。该方法简便易行,可扩展到CuIn0.8Ga0.2S2的合成。 (C)2016 Elsevier Ltd.保留所有权利。

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